Lecture 2: Physics of Nano-Scale Systems: Nanoscience – towards a new Technology

By Nobel Laureate in Physics Dr. Johannes Georg Bednorz at IBM Zurich Research Laboratory, Switzerland

Time:Wednesday, 03:00 pm, November 17, 2010

Location:Sunny Hall, Yingjie Exchange Center

Contact:胡永云 (Yongyun Hu)，62754291，yyhu@pku.edu.cn

Abstract：On a first approach nanotechnology can be seen as an extension of current technology processes and device dimensions from the micrometer to the nanometer scale. In this sense downsizing CMOS technology plays a central role for the next generation of IT components. Nanoscience however exploring materials on the atomic or molecular level is not only discovering new phenomena but will be leading to new concepts in electronics and will open a fundamentally new field for materials and components with new functionality.

CV of Dr. Johannes Georg Bednorz：J. Georg Bednorz, along with his colleague, K. Alexander Mueller, was awarded the Nobel Prize in Physics in 1987 for his discovery of high-temperature superconductivity in a new class of materials. Drs. Bednorz and Mueller startled the world by reporting superconductivity in a layered, ceramic material at a then-record-high temperature -- 33 degrees above absolute zero, or 0 Kelvin (roughly -460 degrees Fahrenheit). Their discovery set off an avalanche of research worldwide into related materials that yielded dozens of new superconductors, eventually reaching a transition temperature of 135 Kelvin.

Born May 16, 1950 in Neuenkirchen, West Germany, Dr. Bednorz was educated at the University of Munster, where he received his master's degree in 1976, and the Swiss Federal Institute of Technology in Zurich, where he received his doctorate degree in 1982. While an undergraduate, Dr. Bednorz spent three months at the IBM Zurich Research Laboratory as a summer intern. After finishing his studies, he joined the Zurich laboratory as a researcher in 1982.

Today, his activities as an IBM Fellow concentrate on the development of complex oxide compounds with novel crystal structures and their specific modification for possible implementation in microelectronics.